SCIENCE

The key building block of the system is a completely new solution for joining the layer building blocks of the UVC LED diode with the introduction of layer invectors or tunnel heterojunctions based on AlGaN substrate. AlGaN-based tunnel heterojections grown by vapor phase metallogous epitaxy allow for completely transparent UVC LEDs by removing the p-AlGaN and p-GaN absorption layers. In addition, the electrical characteristics are improved by exploiting the higher conductivity of the n-AlGaN layers and the lower resistance of the n-contacts. The UVC LED technology used is based on AlGaN: Mg / AlGaN: Si tunnel layer connections, which have a uniform maximum emission at 268 nm, which proves the efficient injection of the carrier into the multiple active range of AlGaN quantum wells.

Science

The result of the process is a logarithmically increased effective efficiency of the irradiation luminosity of the LED element, and at the same time a rapidly reduced total temperature coefficient of body heating during operation. In layman’s terms, by using a technological production process, we obtain a much more powerful UVC LED diode, which uses less energy for its operation, as the new production process enables much less losses. Energy losses are of course converted into kinetic energies and thus affect the, in this case negative, thermodynamic structure of the element.

Cover lenses are made using synthetic quartz glass of the JGS1 or JGS2 category, which are made of very high purity synthetic silica (SiO2 above 99.9999%). The colorless quartz glass combines a low coefficient of thermal expansion and good optical properties and excellent ultraviolet radiation transmission. JGS type glass is transparent to ultraviolet and visible light. It contains dohan OH groups, which cause low permeability in the infrared range of 1.4 µm2.2 µm2.7 µm, as it is practically free of bubbles and impurities.

Science